? 2008 ixys corporation, all rights reserved symbol test conditions maximum ratings v ces t c = 25c to 150c 600 v v cgr t j = 25c to 150c, r ge = 1m 600 v v ges continuous 20 v v gem transient 30 v i c110 t c = 110c 36 a i f110 t c = 110c 10 a i cm t c = 25c, 1ms 200 a ssoa v ge = 15v, t vj = 125c, r g = 5 i cm = 60 a (rbsoa) clamped inductive load @ 600v p c t c = 25c 220 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque 1.13/10 nm/lb.in. weight 6.0 g ds99724a(07/08) symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = 0.8 ? v ces 75 a v ge = 0v t j = 125c 500 a i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 30a, v ge = 15v, note 1 1.4 v v ces = 600v i c110 = 36a v ce(sat) 1.4v genx3 tm 600v igbt with diode ultra low vsat pt igbt for up to 5khz switching preliminary technical information IXGH36N60A3D4 g = gate c = collector e = emitter tab = collector (tab) to-247 (ixgh) g c e features z optimized for low conduction losses z square rbsoa z anti-parallel ultra fast diode z international standard package advantages z high power density z low gate drive requirement applications z power inverters z ups z motor drives z smps z pfc circuits z battery chargers z welding machines z lamp ballasts z inrush current protection circuits
ixys reserves the right to change limits, test conditions and dimensions. IXGH36N60A3D4 symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 30a, v ce = 10v, note 1 25 42 s c ies 2380 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 115 pf c res 30 pf q g 80 nc q ge i c = 30a, v ge = 15v, v ce = 0.5 ? v ces 12 nc q gc 36 nc t d(on) 18 ns t ri 23 ns e on 0.74 mj t d(off) 330 ns t fi 325 ns e off 3.00 mj t d(on) 18 ns t ri 25 ns e on 1.50 mj t d(off) 500 ns t fi 500 ns e off 5.30 mj r thjc 0.56 c/w r thcs 0.21 c/w note 1: pulse test, t 300 s; duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p to-247 (ixgh) outline inductive load, t j = 25c i c = 30a, v ge = 15v v ce = 400v, r g = 5 inductive load, t j = 25c i c = 30a, v ge = 15v v ce = 400v, r g = 5 preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice. reverse diode (fred) symbol test conditions characteristic values (t j = 25c, unless otherwise specified) min. typ. max. v f i f = 10a, v ge = 0v, note 1 3.0 v t j = 150c 1.7 v i rm 60 ns t rr 3 a 4 a r thjc 2.5 c/w t j = 100c t j = 25c t j = 100c i f = 10a, -di f /dt = 200a/ s v r = 300v
? 2008 ixys corporation, all rights reserved fig. 1. output characteristics @ 25oc 0 5 10 15 20 25 30 35 40 45 50 55 60 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v ce - volts i c - amperes v ge = 15v 13v 11v 9v 7v 5v fig. 2. extended output characteristics @ 25oc 0 30 60 90 120 150 180 210 240 270 300 0246810121416 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 3. output characteristics @ 125oc 0 5 10 15 20 25 30 35 40 45 50 55 60 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v ce - volts i c - amperes v ge = 15v 13v 11v 9v 7v 5v fig. 4. dependence of v ce(sat) on junction temperature 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 60a i c = 30a i c = 15a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5 6 7 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 60a 30a 15a t j = 25oc fig. 6. input admittance 0 20 40 60 80 100 120 140 160 180 200 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 v ge - volts i c - amperes t j = 125oc 25oc - 40oc IXGH36N60A3D4
ixys reserves the right to change limits, test conditions and dimensions. IXGH36N60A3D4 fig. 11. maximum transient thermal impedance 0.01 0.10 1.00 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w ixys ref: g_36n60a3(55) 07-03-08-a fig. 7. transconductance 0 10 20 30 40 50 60 70 80 0 20 40 60 80 100 120 140 160 180 200 i c - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 19. reverse-bias safe operating area 0 10 20 30 40 50 60 70 100 200 300 400 500 600 700 v ce - volts i c - amperes t j = 125oc r g = 5 ? dv / dt < 10v / ns fig. 17. gate charge 0 2 4 6 8 10 12 14 16 0 1020304050607080 q g - nanocoulombs v ge - volts v ce = 600v i c = 30a i g = 10 ma fig. 18. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes
? 2008 ixys corporation, all rights reserved fig. 17. inductive turn-off switching times vs. junction temperature 300 350 400 450 500 550 600 650 700 750 800 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 240 280 320 360 400 440 480 520 560 600 640 t d(off) - nanoseconds t f t d(off) - - - - r g = 5 ? , v ge = 15v v ce = 400v i c = 15a, 30a, 60a ` fig. 12. inductive switching energy loss vs. gate resistance 2 3 4 5 6 7 8 9 10 11 12 0 102030405060708090100110120 r g - ohms e off - millijoules 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 e on - millijoules e off e on - - - - t j = 125oc , v ge = 15v v ce = 400v i c = 30a i c = 60a i c = 15a fig. 14. inductive switching energy loss vs. collector current 1 2 3 4 5 6 7 8 9 10 11 15 20 25 30 35 40 45 50 55 60 i c - amperes e off - millijoules 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 e on - millijoules e off e on - - - - r g = 5 ? , v ge = 15v v ce = 400v t j = 125oc t j = 25oc fig. 13. inductive switching energy loss vs. junction temperature 1 2 3 4 5 6 7 8 9 10 11 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 e on - millijoules e off e on - - - - r g = 5 ? , v ge = 15v v ce = 400v i c = 60a i c = 15a i c = 30a fig. 15. inductive turn-off switching times vs. gate resistance 450 500 550 600 650 700 750 800 850 900 950 0 102030405060708090100110120 r g - ohms t f - nanoseconds 300 400 500 600 700 800 900 1000 1100 1200 1300 t d(off) - nanoseconds t f t d(off) - - - - t j = 125oc, v ge = 15v v ce = 400v i c = 60a i c = 15a, 30a fig. 16. inductive turn-off switching times vs. collector current 250 300 350 400 450 500 550 600 650 700 750 800 850 15 20 25 30 35 40 45 50 55 60 i c - amperes t f - nanoseconds 240 270 300 330 360 390 420 450 480 510 540 570 600 t d(off) - nanoseconds t f t d(off) - - - - r g = 5 ? , v ge = 15v v ce = 400v t j = 125oc t j = 25oc IXGH36N60A3D4
ixys reserves the right to change limits, test conditions and dimensions. IXGH36N60A3D4 ixys ref: g_36n60a3(55) 07-03-08-a fig. 18. inductive turn-on switching times vs. gate resistance 0 15 30 45 60 75 90 105 120 135 150 0 102030405060708090100110120 r g - ohms t r - nanoseconds 10 20 30 40 50 60 70 80 90 100 110 t d(on) - nanoseconds t r t d(on) - - - - t j = 125oc, v ge = 15v v ce = 400v i c = 60a i c = 15a i c = 30a fig. 20. inductive turn-on switching times vs. collector current 10 15 20 25 30 35 40 45 50 55 60 15 20 25 30 35 40 45 50 55 60 i c - amperes t r - nanoseconds 15 16 17 18 19 20 21 22 23 24 25 t d(on) - nanoseconds t r t d(on) - - - - r g = 5 ? , v ge = 15v v ce = 400v t j = 125oc t j = 25oc fig. 19. inductive turn-on switching times vs. junction temperature 5 10 15 20 25 30 35 40 45 50 55 60 65 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds 15 16 17 18 19 20 21 22 23 24 25 26 27 t d(on) - nanoseconds t r t d(on) - - - - r g = 5 ? , v ge = 15v v ce = 400v i c = 15a i c = 30a i c = 60a
? 2008 ixys corporation, all rights reserved IXGH36N60A3D4 fig. 23. peak reverse current i rm fig. 22. reverse recovery charge q r fig. 21. forward current i f versus v f fig. 24. dynamic parameters q r , i rm fig. 25. recovery time t rr versus -di f /dt fig. 26. peak forward voltage v fr and fig. 27. transient thermal resistance junction-to-case constants for z thjc calculation: ir thi (k/w) t i (s) 1 1.449 0.0052 2 0.5578 0.0003 note: fig. 2 to fig. 6 shows typical values 200 600 1000 0 400 800 40 60 80 100 0.00001 0.0001 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 k f t vj c -di f /dt t s k/w 0 200 400 600 800 1000 0 20 40 60 0.0 0.1 0.2 0.3 v fr di f /dt v 200 600 1000 0 400 800 0 2 4 6 8 10 100 1000 0 50 100 150 200 250 0123 0 5 10 15 20 25 30 i rm q r i f a v f -di f /dt -di f /dt a/ s a v nc a/ s a/ s t rr ns t fr z thjc a/ s s t vj = 150c t vj = 100c t vj = 25c i rm q r v fr t vj = 100c v r = 300 v t vj = 100c v r = 300 v t vj = 100c v r = 300 v dsep 8-06b t fr i f = 5 a i f = 10 a i f = 20 a i f = 5 a i f = 10 a i f = 20 a i f = 5 a i f = 10 a i f = 20 a t vj = 100c i f = 10 a
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